▎ 摘　　要

NOVELTY - The manufacture method involves preparing a germanium substrate, forming an amorphous graphene layer (130) on the germanium substrate, and forming an ultra-thin inorganic semiconductor film (140) on the amorphous graphene layer. The ultra-thin inorganic semiconductor film is transferred to a target substrate. USE - Manufacture method of ultra-thin inorganic semiconductor film. ADVANTAGE - Provides flexible ultra-thin inorganic semiconductor film having a uniform thickness, thus ensuring higher charge mobility and resiliency against an external environment. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a manufacture method of three-dimensional (3D) semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view illustrating a method of manufacturing an ultra-thin inorganic semiconductor film. First substrate (110) Germanium layer (120) Hydrogen passivation layer (122) Amorphous graphene layer (130) Ultra-thin inorganic semiconductor film (140) Annealed ultra-thin silicon film (142)