▎ 摘　　要

NOVELTY - The method involves providing substrate which is permeable to infrared ray. The chemical vapor deposition of performed to graphene in order to form graphene channel layer. The channel layer is patterned to form a grid dielectric layer. The photoconduction effect is generated in the radiation of infrared ray by the graphene channel layer, so that the electrical characteristic of graphene FET is changed. USE - Method for preparing graphene FET. ADVANTAGE - The preparation method of graphene FET is simplified and easily compatible with integrated circuit manufacturing process. Hence power consumption of graphene FET is reduced. High sensitivity and super-stable infrared detection function are achieved. The infrared bandwidth can be adjusted efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the process of preparing graphene FET. (Drawing includes non-English language text)