• 专利标题:   Metal-semiconductor electrode structure used for nano semiconductor electronic devices, consists of semiconductor layer, metal electrode, and graphene layer arranged between semiconductor layer and metal electrode.
  • 专利号:   CN102064189-A
  • 发明人:   CAI D, FAN Y, LIU L, LIU Z, WANG J, XU G, ZHANG X, ZHONG H
  • 专利权人:   SUZHOU NANOWIN SCI TECHNOLOGY CO LTD, SUZHOU INST NANOTECH NANOBIONICS
  • 国际专利分类:   H01L021/28, H01L021/285, H01L029/47
  • 专利详细信息:   CN102064189-A 18 May 2011 H01L-029/47 201150 Pages: 13 Chinese
  • 申请详细信息:   CN102064189-A CN10574581 06 Dec 2010
  • 优先权号:   CN10574581

▎ 摘  要

NOVELTY - A metal-semiconductor electrode structure consists of a semiconductor layer, a metal electrode, and a graphene layer arranged between the semiconductor layer and metal electrode. USE - Metal-semiconductor electrode structure is used for nano semiconductor electronic devices. ADVANTAGE - The metal-semiconductor electrode structure consists of a graphene layer which reduces the contact resistance between the metal electrode and semiconductor layer. The graphene layer can be widely applied to metals with different work function and semiconductors with different doped types and doping concentration. The electrode structure can be steadily manufactured by a simple and economical method with excellent repeatability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of metal-semiconductor electrode, which involves forming a graphene layer on a growth substrate arranging the growth substrate in a chemical corrosive liquid which can corrode the growth substrate such that the graphene film layer gets peeled from the growth substrate and floats on the liquid surface, cleaning the surface of a semiconductor substrate, hooking the graphene film from the liquid through the semiconductor substrate, laying and adhering the graphene film layer on the surface of semiconductor substrate through the tensile force of the surface of graphene material to form a graphene layer on the surface of semiconductor substrate, forming a metal layer on the surface of graphene layer, forming an etch-prevention layer on the surface of metal layer, and etching the metal layer and graphene layer to the substrate.