• 专利标题:   Performing chemical modification of graphene used in preparation of graphene devices, by performing photochemical modification of graphene and substrate using pulsed laser patterning, and subjecting to atomic layer selective deposition.
  • 专利号:   CN106783560-A
  • 发明人:   LU W, XIA Y, CHENG S, ZHANG Q, WANG H, LI N
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   B82Y010/00, C01B032/194, H01L021/04, H01L029/16
  • 专利详细信息:   CN106783560-A 31 May 2017 H01L-021/04 201752 Pages: 9 Chinese
  • 申请详细信息:   CN106783560-A CN11229355 27 Dec 2016
  • 优先权号:   CN11229355

▎ 摘  要

NOVELTY - Method for performing chemical modification of graphene, involves performing photochemical modification of graphene and substrate using pulsed laser direct patterning, and subjecting the photochemical modified graphene and substrate to atomic layer selective deposition. USE - The method is useful for performing chemical modification of graphene which is used in preparation of graphene devices (all claimed). ADVANTAGE - The method performs chemical modification of graphene simply, and enables to prepare graphene device conveniently and simply by reducing general graphene device manufacturing exposure, deposition and etching complex technology.