• 专利标题:   Production of high-quality analogous reduced graphene oxide for e.g. supercapacitor involves oxidizing graphite, dispersing obtained powder in water, adding photopolymerization initiator/catalyst/stabilizer, UV-irradiating, and drying.
  • 专利号:   IN201611028125-A
  • 发明人:   SHARMA S K, SONI M, KUMAR P, SONI A
  • 专利权人:   SATINDER K S, MAHESH S, PAWAN K, AJAY S
  • 国际专利分类:   C01B031/00
  • 专利详细信息:   IN201611028125-A 02 Sep 2016 C01B-031/00 201671 Pages: 27 English
  • 申请详细信息:   IN201611028125-A IN11028125 18 Aug 2016
  • 优先权号:   IN11028125

▎ 摘  要

NOVELTY - A high-quality analogous reduced graphene oxide ( alpha r-GO) is produced by oxidizing graphite in presence of sodium nitrate, potassium permanganate, and sulfuric acid, cleaning/washing, centrifuging, drying, dispersing obtained fine, micro graphene oxide powder in water using consecutive multiple sonication steps to formulate homogeneous stable aqueous suspension, adding high dipole moment photopolymerization initiator/catalyst/stabilizer to enhance kinetics and stability of dispersion, reducing homogeneous, stable, aqueous graphene oxide dispersion by coherent deep UV irradiation, and drying. USE - A one-step, low-temperature, cost-effective method for commercial scale production of high quality analogous reduced graphene oxide ( alpha r-GO) for alpha r-GO dispersion used for high density supercapacitor, high density energy storage, and conductive ink applications (all claimed). ADVANTAGE - The alpha r-GO aqueous dispersion formulation contains uniform, homogeneous, long-lasting stability for up to 160 days and provides supercapacitor have specific capacitance and charge/discharge cycles with long-term cyclic stability, retention, enhanced kinetically stable dispersion, etc. In addition, the method is eco-friendly by which health and safety issues associated with primary synthesis of graphene and alpha r-GO are addressed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for alpha r-GO-based high density supercapacitor which has specific capacitance of 50-220 F/g for current density of 0.5-10 A/g.