▎ 摘　　要

NOVELTY - The method involves obtaining (S201) multiple graphene dielectric layer films. Multiple graphene dielectric layer films are washed in deionized water. The graphene dielectric layer film is wound on the preset substrate by rotating the preset substrate in deionized water. A sample of the heterostructure of the graphene dielectric layer is obtained. The heterostructure sample of the graphene dielectric layer is dried. The remaining graphene dielectric layer film is wound on the dried graphene dielectric layer heterostructure sample on the preset substrate by obtaining the graphene dielectric layer heterostructure sample. The heterogeneous structure of the graphene dielectric layer is obtained until a predetermined number of layers are obtained. USE - Manufacturing method of graphene dielectric layer heterostructure. ADVANTAGE - The graphene dielectric layer heterostructure with a preset number of layers is obtained by rotating a preset substrate in deionized water. The production efficiency of the heterostructure of the graphene dielectric layer is greatly improved and the production process is simplified. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the manufacturing method of graphene dielectric layer heterostructure. (Drawing includes non-English language text) Step for obtaining multiple graphene dielectric layer films (S201) Step for spin coating photoresist on the metal substrate graphene surface to obtain the first sample (S202) Step for removing graphene without spin-coated graphene on the back surface of the first sample to obtain a second sample (S203) Step for etching metal substrate of the second sample to obtain a graphene dielectric layer film (S204)