▎ 摘　　要

NOVELTY - Tin sulfide/molybdenum diselenide heterojunction tunnel field-effect transistor based on double-gate control, where the transistor utilizes graphene nano sheet layer/hexagonal boron nitride nano sheet as top gate, silicon dioxide/silicon as bottom gate, and tin sulfide/molybdenum diselenide heterojunction between hexagonal boron nitride and silicon dioxide, in the heterojunction, tin sulfide/molybdenum diselenide nano sheets are partially overlapped, and the overlapped part is a depleted region. USE - The transistor is useful for logic circuit component. ADVANTAGE - The tunneling field-effect transistor has high carrier mobility and wider application range, and has low bias control and characteristics, using ultra-thin graphene sheet and h-BN nano-sheet, under the condition of ensuring the device light transmission type, the device still has obvious control effect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing tin sulfide/molybdenum diselenide heterojunction tunnel field-effect transistor based on double-gate control.