• 专利标题:   Nitrogen-doped graphene electrode for dye-sensitized solar cell, comprises substrate and cured uniform layer of nitrogen-doped graphene thin film on surface of substrate.
  • 专利号:   CN102543469-A, CN102543469-B
  • 发明人:   WANG G, ZHUO S
  • 专利权人:   UNIV SHANDONG TECHNOLOGY
  • 国际专利分类:   H01G009/042, H01G009/20, H01L051/44, H01L051/48, H01M014/00
  • 专利详细信息:   CN102543469-A 04 Jul 2012 H01G-009/042 201266 Pages: 8 Chinese
  • 申请详细信息:   CN102543469-A CN10007533 11 Jan 2012
  • 优先权号:   CN10007533

▎ 摘  要

NOVELTY - A nitrogen-doped graphene electrode comprises a substrate and cured uniform layer of nitrogen-doped graphene thin film provided on surface of substrate. USE - Nitrogen-doped graphene electrode for dye-sensitized solar cell. ADVANTAGE - The nitrogen-doped graphene electrode is manufactured with high conductivity, favorable stability, high strength and excellent photoelectric conversion efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of nitrogen-doped graphene electrode, which involves preparing nitrogen-doped graphene by hydrothermal method, dispersing nitrogen-doped graphene in solvent to form uniform and stable dispersion by ultrasound and stirring, preheating substrate at 45-90 degrees C, coating on surface of substrate, and drying at 50-300 degrees C. The coating method is spin coating, drop coating, spray coating or printing method.