• 专利标题:   Producing nanostructured material involves obtaining zone of plasma, submerging portion of jet of plasma in quenching liquid, contacting submerged jet of plasma with precursor material to form nanostructured material, and injecting precursor material into plasma jet upstream of quenching liquid.
  • 专利号:   US2023077902-A1
  • 发明人:   MOZAEL M M, KEAR B H, NOSKER T, MENG C, TSE S D
  • 专利权人:   UNIV RUTGERS STATE NEW JERSEY
  • 国际专利分类:   C23C014/06, C23C014/32
  • 专利详细信息:   US2023077902-A1 16 Mar 2023 C23C-014/32 202325 English
  • 申请详细信息:   US2023077902-A1 US932044 14 Sep 2022
  • 优先权号:   US244298P, US932044

▎ 摘  要

NOVELTY - Producing nanostructured material involves obtaining a zone of plasma, submerging a portion of the jet of plasma in a quenching liquid, and contacting the submerged jet of plasma with a precursor material to form a nanostructured material. A precursor material is injected into the plasma jet upstream of the quenching liquid, and the fabricated materials are used as synthesized or post annealing to modify the phase or microstructure or morphology. USE - Method for producing nanostructured material. ADVANTAGE - The nanostructured material is produced at a rate of greater than or on the order of 1 pound/hour (0.45 kg/hour). A high-enthalpy arc-plasma or inductively-coupled plasma is used to create the submerged-plasma, which increases the production rates of nanostructured material to industrial scale, and reduces the processing costs compared to a pulsed laser setup for commercial viability.