▎ 摘　　要

NOVELTY - The structure has an upper vertical interconnect access (VIA) (16) whose lower end is connected to a first end of a graphene connector. A top end of a lower VIA (36) is connected to a second end of the graphene connector. The upper VIA penetrates the graphene connector. The upper VIA contacts a liner layer (28) at bottom of the graphene connector. The upper VIA contacts the liner layer at a sidewall of the graphene connector. A liner layer lines a trench containing the graphene connector, where the graphene connector and a portion of the top end of the lower VIA are coplanar. USE - Back-end-of-the line (BEOL) single/dual damascene graphene and metal interconnect structure for use in a semiconductor device e.g. complementary metal oxide semiconductor (CMOS) device and integrated circuit chip, integrated with discrete circuit elements, signal processing devices as part of an intermediate product i.e. motherboard, or end products e.g. toys and low-end applications to advanced computer products. ADVANTAGE - The structure allows a layer of barrier metal to surround copper interconnection in modem copper-based chips so as to prevent diffusion of copper into surrounding materials. The structure reduces size of circuit components and reduces size and resistance of wiring and connecting VIAs interconnected to the circuit components and a spacing between the VIAs on the same level. DETAILED DESCRIPTION - The structure has barrier material i.e. barrier metal (18) selected from a group consisting of cobalt, ruthenium, tantalum, tantalum nitride, indium oxide, tungsten nitride and titanium nitride. An INDEPENDENT CLAIM is also included for a method for forming an interconnect structure. DESCRIPTION OF DRAWING(S) - The drawing shows a side elevational view of a completed graphene and metal interconnect structure. Substrates (10, 12, 32) Etch stopping layers (14, 25, 44) Upper and lower VIAs (16, 36) Barrier metals (18, 19, 38) Liner layer (28)