▎ 摘　　要

NOVELTY - The device has a first channel, source and drain regions formed in a substrate. The source and drain regions are respectively located at two sides of the first channel. A first passivation layer, a second channel, a second passivation layer and a gate structure are formed on the source and drain regions of the first channel. The first passivation layer and the second passivation layer are formed with graphene fluoride. The second channel is formed with graphene. A grid electrode structure is provided with a grid dielectric layer and a grid electrode. A gate formed on the gate dielectric layer. USE - Double-channel fin-FET device. ADVANTAGE - The fluorinated graphene can effectively inhibit interface diffusion of oxygen atom behavior to the substrate so as to avoid unstable oxide and interface defect caused by charge traps, so that the device performance can be improved and the gate leakage current can be reduced. DETAILED DESCRIPTION - A gate electrode is made of physical vapor deposition, metal organic chemical vapor deposition process. An INDEPENDENT CLAIM is also included for a double-channel fin-FET device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating process of a double-channel fin-FET device. '(Drawing includes non-English language text)'