▎ 摘　　要

NOVELTY - The method involves arranging an insulating layer on a grapheme layer and a carbon nano tube layer. A support layer is formed with the grapheme layer and the carbon nano tube layer. A first substrate is provided with the insulating layer that is separated from a second substrate. A sacrificial layer, the insulating layer and the support layer are dipped in a liquid part. The sacrificial layer is provided with a water soluble polymer that is arranged on the first substrate. The second substrate is formed between the insulating layer and the support layer that are adhered to a roll part. USE - Method for forming dielectrical layer for manufacturing FET of display. ADVANTAGE - The method enables degrading a graphene device in convenient manner, forming a thin film layer into a physical transfer system so as to avoid requirement of chemical treatment in a surface substrate. The method enables forming the thin film layer on the substrate so as to reduce stable surface difficulty. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for manufacturing a FET (2) a method for manufacturing a display. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of a method for forming dielectrical layer for manufacturing FET of display.'(Drawing includes non-English language text)'