▎ 摘　　要

NOVELTY - Copper-graphene composite coating on an integrated circuit ceramic circuit board surface comprises a conforming coating adopts a gradient layer structure from inside to outside, a transition metal (M) diffusion layer, a transition metal bonding layer, a metal/copper alternating multilayer transition layer, an intermediate frequency magnetron copper thickening support layer, and a cold spray thickened copper-graphene functional layer, where the vacuum heat treatment is performed after the preparation of the coating to obtain conductive copper composite coating of the integrated circuit ceramic circuit board and the thickness of the composite coating is 53.106-5031.305 mu m. USE - Used as copper-graphene composite coating on an integrated circuit ceramic circuit board surface. ADVANTAGE - The method reduces the substrate temperature by using the coating technology to obtain good copper plating layer, utilizes the high thermal conductivity and high electrical conductivity of graphene to improve the performance of the copper coating and develops excellent environmentally friendly ceramic circuit board surface copper plating technology. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the copper-graphene composite coating on an integrated circuit ceramic circuit board comprising (i) forming a transition metal (M) diffusion layer on the surface of the ceramic circuit board in a vacuum metal environment, cleaning the surface of the ceramic circuit board by an arc ion source, then performing the ion bombardment of the ceramic circuit board by using high pulse arc ion plating technology, where the bombardment bias is 500-1000 V, and forming the metal diffusion layer by using the high temperature of the plasma and the diffusion layer has a depth of 1-5 nm; (ii) forming a transition metal bonding layer on the basis of the transition metal diffusion layer and reducing the coating bias to prepare a metal bonding layer, where the deposition bias is 50-200V, the bonding layer has a thickness of 5-300 nm and a grain size of 3-20 nm; (iii) forming an alternate layer of metal/copper transition layer after the preparation of the bonding layer, opening the intermediate frequency magnetron copper target, preparing metal/copper alternating multilayer transition layer, metal/copper alternate multilayer transition layer, and the modulation period thickness of 10-100 nm, where the thickness of the single layer M layer is 5-50 nm and the thickness of the single layer copper is 5-50 nm and the main purpose of the alternating transition layer is to improve the bonding force between the M layer and the copper layer and the thickness of the transition layer is 100-1000 nm; (iv) forming an intermediate frequency magnetic control copper thickening support layer metal/copper alternating multilayer transition layer preparation after closing the arc target, then preparing copper thick support layer when the support layer is prepared, then using a cold spray technique to prepare a copper-graphene thickened layer on the support layer, where the thickness of which is 50-5000 mu m, the grain size is 5-10 mu m, and the graphene content is 0-5 wt.%; and (v) subjecting to heat treatment of the coating to eliminate defects, improving electrical conductivity and reducing the stress after the preparation of the cold spray thickened layer and heat treating the coating in a vacuum, where the vacuum range is 1x 10-2 to 1x 10-3Pa and the annealing temperature is 500-800 degrees C.