▎ 摘　　要

NOVELTY - A palladium-connected double-junction gallium arsenide/silicon Schottky junction solar cell comprises gold back electrode, silicon substrate, graphene layer, palladium nanoparticles, gallium arsenide substrate, graphene layer, silver paste top electrode from bottom to top. The size of palladium nanoparticles is 10-100 nm. USE - Double-junction gallium arsenide/silicon Schottky junction solar cell. ADVANTAGE - The double-junction gallium arsenide/silicon Schottky junction solar cell is environmentally-friendly, and can be manufactured easily with reduced manufacturing cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the palladium-connected double-junction gallium arsenide/silicon Schottky junction solar cell, which involves using electron beam evaporation method to vaporize a layer of gold on the back of the silicon substrate as the back electrode, annealing after vapor deposition, using a diamond pen to split the gallium arsenide and silicon substrates into small pieces of 1-4 cm2 and cleaning, spin-coating an o-xylene solution containing polystyrene and poly(2-vinylpyridine) onto the gallium arsenide substrate by spin coating, and then soaking the substrate in sodium-palladium-chloride, removing poly(2-vinylpyridine) by argon plasma treatment to obtain palladium nanoparticles are obtained on gallium arsenide, transferring the soaked graphene until the graphene floats on the water surface, clamping the gallium arsenide substrate sheet with tweezers, contacting graphene with the side that does not contain palladium nanoparticles, removing and drying at room temperature for 1-2 hours, then soaking in acetone at 20-80 degrees C for 10-50 minutes to remove polymethyl methacrylate on the graphene surface, pasting insulating tape on the edge of the graphene to reduce leakage, applying a circle of conductive silver paste using a syringe on the insulating tape, contacting conductive silver paste with the graphene, heating and drying at 50-100 degrees C for 30-50 minutes to obtain gallium arsenide/graphene Schottky junction battery, clamping the silicon substrate sheet with tweezers, make the substrate sheet contact with the graphene soaked, removing, drying at room temperature for 1-2 hours, soaking in acetone at 20-80 degrees C for 10-50 minutes to remove polymethyl methacrylate on the graphene surface to obtain silicon/graphene Schottky junction battery, wetting the back of gallium arsenide containing palladium and contacting it with the graphene of the silicon/graphene Schottky junction cell, pressing at room temperature and vacuuming for 2-3 hours.