• 专利标题:   Cadmium-zinc-tellurium photoelectric detector has structure including fluorine-doped tin oxide conductive glass substrate, cadmium-zinc-tellurium film, graphene transition layer and gold electrode, and having ohmic contact interface.
  • 专利号:   CN105161565-A
  • 发明人:   HUANG J, MENG H, XU R, TAO J, WANG L, YU H, ZHANG J, ZHANG Y, CHEN M
  • 专利权人:   UNIV SHANGHAI
  • 国际专利分类:   H01L031/0224, H01L031/028, H01L031/109, H01L031/18
  • 专利详细信息:   CN105161565-A 16 Dec 2015 H01L-031/109 201639 Pages: 8 English
  • 申请详细信息:   CN105161565-A CN10365436 29 Jun 2015
  • 优先权号:   CN10365436

▎ 摘  要

NOVELTY - A cadmium-zinc-tellurium photoelectric detector consists of layered composite structure formed by sequentially laminating conductive substrate, cadmium-zinc-tellurium film, graphene transition layer having thickness of 0.2-0.5 mm, and metal electrode layer, and having ohmic contact interface formed between cadmium-zinc-tellurium film and metal electrode layer. The conductive substrate is formed using fluorine-doped tin oxide conductive glass. The content of zinc in the cadmium-zinc-tellurium film is 2-20%. The metal electrode layer is gold electrode. USE - Cadmium-zinc-tellurium photoelectric detector (claimed). ADVANTAGE - The cadmium-zinc-tellurium photoelectric detector having excellent sensitivity and photoelectric responsiveness is manufactured efficiently and economically by simple method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of cadmium-zinc-tellurium photoelectric detector.