▎ 摘　　要

NOVELTY - A graphene-based ultraviolet to near-infrared indium-gallium-arsenic detector chip comprises indium-phosphorus substrate, indium-phosphorus contact layer, indium-gallium-arsenic absorption layer, silicon dioxide dielectric layer, graphene layer, upper metal electrode and lower metal electrode, where the indium-phosphorus contact layer, indium-gallium-arsenic absorption layer are grown on the indium-phosphorus substrate by an epitaxial technique, the silicon dioxide dielectric layer is deposited on the indium-gallium-arsenic layer, the square hole is formed in the silicon dioxide dielectric layer by a semiconductor process such as photolithography and etching, and the graphene layer is transferred over the square hole and covers the square hole, the metal electrode on the source is deposited on the graphene layer on the left and right sides or on the upper and lower sides of the square hole, and the lower metal electrode is deposited on the etched indium-phosphorus contact layer. USE - Graphene-based ultraviolet to near-infrared indium-gallium-arsenic detector chip.