▎ 摘　　要

NOVELTY - A graphene preparation based on assistant annealing of Ni film involves carrying out standard cleaning to Si substrate; putting cleaned Si substrate into chemical vapor deposition (CVD) system reaction chamber; heating, circulating C3H8 and SiH4, growing 3C-SiC hetero-epitaxy film, placing the grown 3C-SiC sample into quartz tube; heating three-mouth flask with CCl4 liquid, reacting Ar gas with CCl4 steam and 3C-SiC; depositing Ni film on Si substrate by electronic beam; placing the carbon surface with two layers of carbon film samples on Ni film, putting in Ar gas, and annealing. USE - As graphene preparation method based on assistant annealing of Ni film (claimed); and for sealing gas and liquid. ADVANTAGE - The method has large area of the dual-layer grapheme; has smooth surface; has good continuity; and has low porosity. DETAILED DESCRIPTION - A graphene preparation method based on assistant annealing of Ni film, involves carrying out standard cleaning to an Si substrate of 4-12 inches; putting the cleaned Si substrate into a chemical vapor deposition (CVD) system reaction chamber, vacuumizing the reaction chamber to reach 10(-7) mbar level; gradually heating to carbonization temperature of 1000-1200 degrees C under the protection of H2, circulating C3H8 with flow of 30 ml/min, carbonizing the substrate for 4-8 minutes, and growing a layer of carbonization layer; rapidly heating to growth temperature of 1200-1350 degrees C, circulating C3H8 and SiH4, growing 3C-SiC hetero-epitaxy film for 30-60 minutes, gradually cooling to room temperature under the protection of H2 to finish growth of the 3C-SiC hetero-epitaxy film; placing the grown 3C-SiC sample into a quartz tube and heating to 800-1000 degrees C; heating a three-mouth flask with CCl4 liquid to 60-80 degrees C, reacting Ar gas with CCl4 steam and 3C-SiC in the quartz tube, where the flow speed of Ar gas is 40-80 ml/min and the reaction time is 30-120 minutes; depositing the Ni film with the thickness of 300-500 nm on the Si substrate by an electronic beam; placing the carbon surface with two layers of carbon film samples on the Ni film, putting in Ar gas, and annealing at 900-1000 degrees C for 15-25 minutes to obtain a dual-layer graphene; and taking the Ni film from the two layers of graphene samples.