• 专利标题:   Semiconductor structure use in semiconductor integrated circuit industry, has dielectric layer formed on substrate, graphene conductive structure formed with graphene layer, and graphene layer extending direction parallel to inner side surface of dielectric layer.
  • 专利号:   CN115602616-A, US2023066891-A1, TW202310293-A
  • 发明人:   LI M, LU M, LI S, ZHAN Y, YANG S, GUO Z, LEE M, CHAN Y, KUO T
  • 专利权人:   TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD
  • 国际专利分类:   H01L021/768, H01L023/48, H01L023/532, H01L023/522
  • 专利详细信息:   CN115602616-A 13 Jan 2023 H01L-021/768 202312 Chinese
  • 申请详细信息:   CN115602616-A CN10007264 05 Jan 2022
  • 优先权号:   US460909

▎ 摘  要

NOVELTY - The structure has a dielectric layer formed on a substrate and provided with an inner side perpendicular to the substrate. A graphene conductive structure is formed with a graphene layer. The graphene layer extends in a direction parallel to an inner side surface of the dielectric layer. USE - Semiconductor structure for use in a semiconductor integrated circuit (IC) industry. ADVANTAGE - The semiconductor structure has excellent electrical characteristics, and can be easily and economically manufactured with high reliability and improved performance. DESCRIPTION OF DRAWING(S) - The drawing illustrates a flow chart diagram illustrating an operation of the semiconductor structure (Drawing includes non-English language text).