▎ 摘　　要

NOVELTY - A large-scale preparation of silicon carbide nanowire comprises dispersing graphene or its derivative in water at a concentration of 0.1-50 mg/mL, ultrasonicating, and freeze-drying to obtain spongy graphene or its derivative as as carbon source; and mixing 100 pts. wt. silica powder with 30-70 pts. wt. silicon powder in high temperature-resistant container, adding layer of graphite paper on top as substrate, adding 5-200 pts. wt. spongy graphene or its derivative on top of graphite paper, covering container, placing to high temperature-resistant furnace, and calcining to 1100-2000 degrees C at 0.05-1000 Pa. USE - The method is for large-scale preparation of silicon carbide nanowire used for electronics and aerospace. ADVANTAGE - The method uses silicon powder and silicon dioxide powder as silicon source, forms vaporized silicon monoxide gas at high temperature, and does not use catalyst which results to high purity and crystallinity nanowire product with high mechanical strength and lesser defects such as stacking faults. The nanowire product can meet the cutting-edge needs of extreme service conditions such as electronics and aerospace.