• 专利标题:   Preparing a antimony oxychloride material based on ALD technology useful e.g.in the field of photocatalysis comprises e.g. alternately passing vaporized antimony source antimony trichloride and oxygen source water into the reaction chamber.
  • 专利号:   CN112626497-A, CN112626497-B
  • 发明人:   DU L, HE D, DING Y
  • 专利权人:   UNIV JIANGNAN
  • 国际专利分类:   B01J027/06, B82Y030/00, B82Y040/00, C23C016/30, C23C016/455
  • 专利详细信息:   CN112626497-A 09 Apr 2021 C23C-016/455 202135 Pages: 8 Chinese
  • 申请详细信息:   CN112626497-A CN11372261 30 Nov 2020
  • 优先权号:   CN11372261

▎ 摘  要

NOVELTY - Preparing a antimony oxychloride material based on ALD technology comprises alternately passing the vaporized antimony source antimony trichloride and oxygen source water into the reaction chamber of atomic layer deposition ALD equipment, under vacuum conditions and placing the substrate in advance pulse form,where the alternating pulse mode is antimony trichloride pulse, cleaning, water pulse, cleaning and completing a single growth cycle in this mode at a specific deposition temperature and repeating many single growth cycles. USE - The antimony oxychloride material is useful in the field of photocatalysis (claimed) and atomic layer deposition technology. ADVANTAGE - The material: can deposit antimony oxychloride materials with photo catalytic properties with controllable loading and distribution of atomic active sites on a variety of substrates. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for antimony oxychloride material based on ALD technology prepared by the above mentioned method.