▎ 摘　　要

NOVELTY - The method involves depositing and growing graphene wafer on a sapphire/metal substrate (2) by vapor deposition. The sheet is arranged above the metal substrate, and the sheet is parallel to the plane of the metal substrate. The distance between the metal substrate and satisfies the projection of the sheet in the vertical direction completely covers the metal substrate. The sheet is another sapphire/metal substrate and a sapphire sheet or film layer. The metal substrate is a metal single crystal film layer. The metal substrate is copper or copper-nickel single crystal film layer. The metal substrate is formed by magnetron sputtering. USE - Method for growing graphene wafer. ADVANTAGE - The growth process in the metal substrate is reduced atmosphere protection, The substrate surface not form oxidation spot, so as to avoid the substrate surface generate defect, which improves the quality of the growth of the wafer graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a carrier used for deposition growth graphene wafer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the carrier. 1Boat frame 2Sapphire or metal substrate