▎ 摘　　要

NOVELTY - The switch has a substrate provided with an insulation layer and a back electrode. A source and drain electrodes are arranged on the substrate along first arrangement direction. The substrate is attached with a graphene layer along second arrangement direction. A support electrode is connected with the source and drain electrodes that are electrically connected together, where the graphene layer is a crystal structure layer. The insulation layer and back electrode are provided with a passivation protective layer. The source and drain electrodes are provided with a medium layer. USE - Non-standard electrostatic force switch. ADVANTAGE - The switch can use bias electrode between the source and drain electrodes, thus providing electrostatic force to pull the film bridge down, and has efficient deformation process to form a switch, small threshold voltage and compatible CMOS battery, and avoids usage of large driving circuit and reduces the size of micro-nano machinery switch. DETAILED DESCRIPTION - The source electrode, the drain electrode, the back electrode and support electrode are made of doped multi-crystal, metal or metal alloy, metal nitride materials. An INDEPENDENT CLAIM is also included for a non-standard electrostatic force switch manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a non-standard electrostatic force switch.