1. 平台首页
  2. 国际专利信息
  • 专利标题:   Graphene field effect device preparing method, involves forming source electrode and drain electrode in graphene field effect device structure, and connecting source electrode and drain electrode with graphene.
  • 专利号:   CN102931057-A, CN102931057-B
  • 发明人:   KANG X, LIU X, SUN Q, WANG H, XIE H, XIE X
  • 专利权人:   CHINESE ACAD SCI SHANGHAI MICROSYSTEM, SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   H01L021/04, H01L029/51, H01L029/78
  • 专利详细信息:   CN102931057-A 13 Feb 2013 H01L-021/04 201343 Pages: 13 Chinese
  • 申请详细信息:   CN102931057-A CN10461745 16 Nov 2012
  • 优先权号:   CN10461745

▎ 摘　　要

NOVELTY - The method involves etching a substrate to form a gate electrode trench, and depositing Al metal material on a surface of the substrate. The metal Al material is filled in a gate electrode groove that is formed in the surface of the substrate with a gate electrode. A BN thin film layer exposes the gate electrode. A source electrode and the drain electrode are formed in a graphene field effect device structure. The source electrode and the drain electrode are connected with graphene. USE - Graphene field effect device preparing method. ADVANTAGE - The method effectively keeps graphene with high mobility and improves field effect of a gate electrode. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a grid medium structure (2) a graphene field effect device DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional view of a graphene field effect device. '(Drawing includes non-English language text)'