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  • 专利标题:   Electronic device has first electrode with epitaxial graphene monolayer forming ohmic contact with substrate, and second electrode with epitaxial graphene monolayer forming Schottky baffler with substrate.
  • 专利号:   WO2012171665-A1, EP2535937-A1, EP2721639-A1, US2014225066-A1, EP2535937-B1, US9269774-B2
  • 发明人:   WEBER H B, KRIEGER M, HERTEL S, KRACH F, JOBST J, WALDMANN D
  • 专利权人:   UNIV ERLANGENNUERNBERG
  • 国际专利分类:   H01L021/02, H01L021/04, H01L021/329, H01L021/338, H01L021/82, H01L027/06, H01L027/105, H01L029/417, H01L029/423, H01L029/45, H01L029/47, H01L029/812, H01L029/872, H01L029/16, H01L049/02, H01L021/84, H01L027/12, H01L029/49, H01L029/66
  • 专利详细信息:   WO2012171665-A1 20 Dec 2012 H01L-029/47 201303 Pages: 38 English
  • 申请详细信息:   WO2012171665-A1 WOEP002572 18 Jun 2012
  • 优先权号:   EP004981

▎ 摘　　要

NOVELTY - The electronic device (1) has a first electrode (8) and a second electrode (9) disposed on the front surface (7) of a substrate (3). The first electrode and the second electrode respectively have an epitaxial graphene monolayer (10). The epitaxial graphene monolayer of the first electrode forms an ohmic contact with the substrate. The epitaxial graphene monolayer of the second electrode forms a Schottky baffler with the substrate. USE - Electronic device. ADVANTAGE - Offers easy to fabricate and simple to manufacture electronic device. Utilizes excellent electrical properties of graphene. Enables preparation of patterned graphene layers on semiconductor substrate by converting contact graphene to gate graphene or gate graphene to contact graphene locally. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic cross-sectional view of an electronic device. Electronic device (1) Substrate (3) Front surface (7) First electrode (8) Second electrode (9) Epitaxial graphene monolayer (10)