▎ 摘　　要

NOVELTY - Graphene field effect transistor comprises a substrate gate (1), a lower gate dielectric material (2), graphene (3), a source (5) and a drain electrode (6), where the lower gate dielectric material is positioned on the surface of the substrate gate. The graphene is positioned on the surface of the lower gate dielectric material. The source and the drain electrode are positioned at the two ends of the graphene. The transistor further comprises an upper gate insulating layer positioned between the source and the drain electrode to cover the surface of the graphene. USE - Used as a graphene field effect transistor. ADVANTAGE - The graphene trench region avoids external interference and reduces the scattering due to the addition of a layer of the upper gate dielectric material on the surface of the graphene trench region of the graphene field effect transistor to seal the graphene trench between the upper gate dielectric material and the lower gate dielectric material. The transistor has improved mobility and switching characteristic. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the graphene field effect transistor. Substrate gate (1) Lower gate dielectric material (2) Graphene (3) Source (5) Drain electrode (6)