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  • 专利标题:   Method of manufacturing nanoelectronic device, involves preparing suspended graphene or graphene film/low scattering substrate sample by chemical adsorption according to the electron beam scanning process.
  • 专利号:   CN102249175-A, CN102249175-B
  • 发明人:   CAO S, CHEN X, GUO L, SHANG K, WANG L, WANG R, WANG X, WEI B, WU G, YANG J
  • 专利权人:   CHINA AVIATION SCI TECHNOLOGY GROUP, CHINA AEROSPACE SCI TECHNOLOGY CORP FI
  • 国际专利分类:   B81B003/00, B82Y040/00
  • 专利详细信息:   CN102249175-A 23 Nov 2011 B81B-003/00 201202 Chinese
  • 申请详细信息:   CN102249175-A CN10092302 13 Apr 2011
  • 优先权号:   CN10092302

▎ 摘　　要

NOVELTY - The method involves using an electron beam excitation desorption principle to perform selective desorbing of the absorbed atoms of chemical adsorption graphene. A suspended graphene or graphene film/low scattering substrate sample is prepared by chemical adsorption according to the electron beam scanning process of absorbed atoms of chemical adsorption graphene. USE - Method of manufacturing nanoelectronic device. ADVANTAGE - The nanoelectronic device having highest resolution is provided efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the manufacturing process of nanoelectronic device.