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  • 专利标题:   Manufacture of graphene film used for manufacture of electronic device, involves contacting amorphous carbon film with metals chosen from gallium, indium, tin and antimony.
  • 专利号:   WO2010110153-A1, KR2011131225-A, EP2412670-A1, US2012082787-A1, CN102438944-A, JP4970619-B2, JP2011506002-X, KR1357060-B1, CN102438944-B, EP2412670-B1, EP2412670-A4
  • 发明人:   FUJITA JUNICHI, FUJITA J I, FUJITA J
  • 专利权人:   JAPAN SCI TECHNOLOGY AGENCY, JAPAN SCI TECHNOLOGY AGENCY, FUJITA J, JAPAN SCI TECHNOLOGY AGENCY
  • 国际专利分类:   C01B031/04, B41M003/00, B41M005/10, H01L021/20, B05D003/02, C23C016/28, C01B031/02
  • 专利详细信息:   WO2010110153-A1 30 Sep 2010 C01B-031/04 201066 Pages: 38 Japanese
  • 申请详细信息:   WO2010110153-A1 WOJP054602 17 Mar 2010
  • 优先权号:   JP080307, KR722297

▎ 摘　　要

NOVELTY - An amorphous carbon film (11) is made to contact with metals chosen from gallium, indium, tin and antimony, and graphene film (10) is formed on contact interface of the amorphous carbon film and metal. USE - Manufacture of graphene film used for manufacture of electronic device (claimed). ADVANTAGE - The method effectively provides graphene film having large area without requiring high temperature. Field effect transistor circuit pattern is easily formed on electronic device substrate. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of electronic device which involves forming resist pattern by coating resist chosen from gallium, tin, antimony and indium on an electronic-device substrate, graphenizing the resist pattern, and then forming electronic circuit by vacuum heat treatment of graphenized resist pattern; and (2) transformation of graphene film on a substrate which involves contacting amorphous film with a substrate surface and then transferring graphene film to the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic structure of graphene film floating on liquid gallium. Liquid gallium (8) Graphene film (10) Amorphous carbon film (11)