▎ 摘　　要

NOVELTY - The method involves forming a first catalytic film (14) with a first melting point. A pattern of a second catalytic film (15) with a second melting point is formed on an upper surface of the first film by forming the second film on the first film and a mask pattern on the second film and etching the second film using the mask pattern as a mask, where the second melting point is lower than the first melting point. A graphene film is formed on the upper surface of the first film and from a side surface of the pattern of the second film. USE - Method for manufacturing a semiconductor device. ADVANTAGE - The method enables obtaining an interconnect with low resistance by using a graphene film to form an interconnect. The method enables little-etching an upper surface of the first catalytic film to maintain a surface state to be efficient in flatness. The method enables forming a graphene film on the surface to be efficient in flatness, so that a graphene film with better quality can be obtained. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Underlying region (11) Underlying insulating film (12) Underlying catalytic film (13) Catalytic films (14, 15) Graphene film (17)