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  • 专利标题:   Two-pole magnetic field sensor, has graphene active layer formed with metallic layer, semiconductor sense layer arranged on insulating substrate, and semiconductor sense layer formed in bar-shaped structure.
  • 专利号:   PL416781-A1, PL229336-B1
  • 发明人:   ELAHMAR S, KOCZOROWSKI W, KUSWIK P
  • 专利权人:   POLITECHNIKA POZNANSKA, INST FIZ MOLEKULARNEJ POLSKIEJ AKAD NAUK, UNIV MICKIEWICZA POZNANIU ADAMA
  • 国际专利分类:   G01R033/09, H01L031/0392, H01L043/06, H01L043/10
  • 专利详细信息:   PL416781-A1 09 Oct 2017 G01R-033/09 201825 Pages: 1
  • 申请详细信息:   PL416781-A1 PL416781 07 Apr 2016
  • 优先权号:   PL416781

▎ 摘　　要

NOVELTY - The sensor has a graphene active layer formed with a metallic layer. A semiconductor sense layer is arranged on an insulating substrate. The semiconductor sense layer is formed in a bar-shaped structure. USE - Two-pole magnetic field sensor.