▎ 摘　　要

NOVELTY - Producing hexagonal boron nitride (h-BN)/graphene two-dimensional composite material involves obtaining germanium (Ge) substrate; depositing hexagonal boron nitride (h-BN) on the germanium (Ge) substrate by controlling an area; and depositing graphene on the surface of the substrate without hexagonal boron nitride (h-BN) by inputting a carbon source to the germanium (Ge) substrate on which the hexagonal boron nitride (h-BN) is partially formed. The hexagonal boron nitride (h-BN) is deposited on the germanium (Ge) substrate by controlling the area, then the area of hexagonal boron nitride (h-BN) is controlled as per the boron nitride deposition time. The boron nitride deposition time is controlled according to an equation with respect to the deposition area, and hexagonal boron nitride (h-BN) is deposited on the germanium (Ge) substrate by controlling the area. USE - Method for producing hexagonal boron nitride/graphene two-dimensional composite material. ADVANTAGE - The method enables to manufacture hexagonal boron nitride/graphene two-dimensional composite material in a simple and cost-effective manner. DETAILED DESCRIPTION - Producing hexagonal boron nitride (h-BN)/graphene two-dimensional composite material involves obtaining germanium (Ge) substrate; depositing hexagonal boron nitride (h-BN) on the germanium (Ge) substrate by controlling an area; and depositing graphene on the surface of the substrate without hexagonal boron nitride (h-BN) by inputting a carbon source to the germanium (Ge) substrate on which the hexagonal boron nitride (h-BN) is partially formed. The hexagonal boron nitride (h-BN) is deposited on the germanium (Ge) substrate by controlling the area, then the area of hexagonal boron nitride (h-BN) is controlled as per the boron nitride deposition time. The boron nitride deposition time is controlled according to an equation, that is Y(area, %)=21x ln(X,(deposition time, minutes)2)-102.34 with respect to the deposition area, and hexagonal boron nitride (h-BN) is deposited on the germanium (Ge) substrate by controlling the area. The graphene is further deposited on the surface of the substrate without hexagonal boron nitride (h-BN) by inputting a carbon source to the germanium (Ge) substrate on which the hexagonal boron nitride (h-BN) is partially formed using chemical vapor deposition method (CVD).