▎ 摘　　要

NOVELTY - Van der Waals epitaxy method of high-quality aluminum gallium nitride (AlGaN) materials on amorphous substrate, comprises transferring a first two-dimensional material layer (2) on an amorphous substrate (1), processing the first two-dimensional material layer, transferring a second two-dimensional material layer (3) on the processed first two-dimensional material layer, performing hydrogenation passivation treatment on the second two-dimensional material layer, providing a metal source and a nitrogen source, growing a two-dimensional AlGaN material by Van der Waals epitaxy, and forming a two-dimensional AlGaN material prefabricated layer (4) between the first and second two-dimensional material layer, growing AlGaN material by homogeneous van der Waals epitaxy by adopting a two-step method, first growing the nucleation layer at low temperature, and then growing at high temperature to form a three-dimensional AlGaN material film (5) on the second two-dimensional material layer. USE - The method is useful for Van der Waals epitaxy process of high-quality aluminum gallium nitride materials on amorphous substrate. ADVANTAGE - The method: utilizes two layers of two-dimensional materials to further alleviate the influence of the epitaxial layer of the amorphous substrate, greatly reduces the stress and dislocation, improves the crystal quality, and provides assistance for the large-area application of AlGaN-based optoelectronic devices, with simple process and remarkable effect. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flow chart of the van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate (Drawing includes non-English language text). 1Amorphous substrate 2First two-dimensional material layer 3Second two-dimensional material layer 4Two-dimensional AlGaN material prefabricated layer 5Three-dimensional AlGaN material film