▎ 摘　　要

NOVELTY - Producing graphene structure, comprises (a) forming an aluminum pattern on a substrate, (b) forming a graphene layer on the substrate and the aluminum pattern, (c) depositing a metal layer on the graphene layer, (d) etching the aluminum pattern, and (e) drying the aluminum etched substrate. USE - The method is useful to produce graphene structure for transistor and photo detectors (all claimed). ADVANTAGE - The method is simple, produces in bulk, and shortens processing time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene structures comprising substrate, graphene layer formed on the substrate and having a three-dimensional structure having an inner space, and a metal layer formed on the graphene layer, where one side of the graphene layer is vertically free supporting type.