▎ 摘　　要

NOVELTY - A cold source diode (10) comprises a substrate (101) and a PN junction (102) comprising a semiconductor layer (201), a semiconductor layer (202), a metal layer (203), and a semiconductor layer (204) stacked on the substrate in sequence. Type (T1) of light doping is present in semiconductor layer (201). Type (T2) of heavy doping is in semiconductor layer (202). Type (T1) of heavy doping is in semiconductor layer (204). USE - Cold source diode is used for controlling conduction between word line and bit line of memory (claimed). ADVANTAGE - The cold source diode improves the cut-off rate of the turn on and reduce the sub-threshold swing of the existing PN junction. The metal layer in the tunneling structure and the P-type and N-type heavily doped semiconductor layers can respectively form a Schottky junction, and increases the probability of electrons from the P type and N type heavily doping semiconductor layer tunneling to the N type metal layer. Since there is a metal layer between the metal layer, and the metal layers of the P and N types, the metal can form a tunneling current, so that the current can be conduction or turn-off of the current under the condition that the sub threshold swing amplitude is less than 60 mV/dec, so as to improve the turn-on efficiency of the diode. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: production of the cold source diode; and a memory. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the cold source diode. 10Cold source diode 101Substrate 102PN junction 201,202,204Semiconductor layers 203Metal layer