▎ 摘　　要

NOVELTY - Preparing vacuum transistor based on a suspended graphene/boron nitride heterojunction, comprises preparing metal electrodes and alignment marks on silicon dioxide/silicon wafers by electron beam exposure and electron beam thermal evaporation, completely etching the silicon dioxide in the region between the metal electrodes using an inductively coupled plasma etcher to obtain an etched channel, absorbing graphene using hexagonal boron nitride and suspending the graphene/boron nitride heterojunction above the channel as a whole using a two-dimensional material transfer platform. USE - The vacuum transistor based on a suspended graphene/boron nitride heterojunction is useful for detection of harmful substances, safe high-speed communication, microprocessors and micro electron emitter (claimed). ADVANTAGE - The method enables fully using the bonding force between the boron nitride and graphene, effectively reducing the graphene fracture, collapse, curling and folding probability, overcoming the difficulty of low success rate of traditional preparation of suspended graphene device, greatly improving the success rate, and the prepared vacuum transistor structure has stronger stability. Using the new transfer method, avoids the graphene and other solution and other medium contact as, effectively solves the problem of doping. The vacuum transistor uses graphene as emitter, silicon below the channel is used as the collector, using the special phonon auxiliary electron emission mechanism of the graphene strip, under the small voltage, the gas in the electric field will not be ionized, avoiding the problem that the previous field emission vacuum transistor faces, and avoids the traditional transistor carrier transmission in the crystal lattice vibration scattering problem. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a vacuum transistor based on a suspended graphene/boron nitride heterojunction.