▎ 摘　　要

NOVELTY - An asymmetric Waals heterojunction device comprises graphene nanosheets, hexagonal boron nitride nanosheets, molybdenum disulfide nanosheets and molybdenum molybdenum nanosheets arranged in order from bottom to top, where the graphene nanosheet and the hexagonal boron nitride nanosheet, the molybdenum disulfide nanosheet and the molybdenum molybdenum nanosheet has overlapping regions, the graphene nanosheet area is larger than the hexagonal boron nitride nanosheet, the molybdenum disulfide nanosheet has a larger area than the molybdenum disulfide nanosheet and the molybdenum disulfide nanosheet has a partial region that does not overlap with the molybdenum molybdenum nanosheet overlaps with the graphene nanosheet and the hexagonal boron nitride nanosheet. USE - Asymmetric Waals heterojunction device for preparing transistors, rectifiers, photodetectors, photovoltaic cells and memory (claimed). ADVANTAGE - The asymmetric Waals heterojunction device has high performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing an asymmetric Waals heterojunction device, which involves applying a bulk material by using a tape to obtain the graphene nanosheet, hexagonal nitrogen boron nanosheets, molybdenum disulfide nanosheets and molybdenum diimide nanosheets, selecting nanosheets by optical microscopy and/or atomic force microscopy, depositing the graphene nanosheet on a substrate and sequentially transferring the hexagonal boron nitride nanosheet, molybdenum disulfide nanosheet, and molybdenum diimide nanosheet and preparing metal electrodes by standard electron beam exposure and metal deposition methods.