• 专利标题:   Method for transferring graphene for use in e.g. organic nano-electronics, involves heating easily sublimated substance, condensing surface of graphene grown on initial matrix and obtaining support layer/graphene/initial matrix.
  • 专利号:   CN106904605-A, CN106904605-B
  • 发明人:   DENG Y, WANG Y, ZHANG X, DAI L, MA R
  • 专利权人:   UNIV PEKING, UNIV PEKING
  • 国际专利分类:   C01B032/194
  • 专利详细信息:   CN106904605-A 30 Jun 2017 C01B-032/194 201760 Pages: 9 Chinese
  • 申请详细信息:   CN106904605-A CN10962569 21 Dec 2015
  • 优先权号:   CN10962569

▎ 摘  要

NOVELTY - The method for transferring graphene, involves (i) heating easily sublimated substance, condensing surface of graphene grown on an initial matrix to form dense supporting layer, and obtaining resulting structure as support layer/graphene/initial matrix, (ii) removing initial matrix, obtaining structure of supporting layer/graphene, (iii) making graphene surface of support layer/graphene into direct contact with target substrate, obtaining structure of supporting layer/graphene/target substrate, (iv) removing support layer through sublimation, and realizing transfer of graphene. USE - Method for transferring graphene for use in flexible electronics, organic nano-electronics, organic solar cells, organic sensors, organic high-performance micro-nano electronic devices, and energy storage applications of organic materials. ADVANTAGE - The method uses easily sublimated substance as a support layer, so that the transfer process is simple and convenient, and realizes transfer of large area of graphene to any target substrate, and prevents loss and residue transfer. DETAILED DESCRIPTION - The method for transferring graphene, involves (i) heating easily sublimated substance, condensing surface of the graphene grown on an initial matrix to form a dense supporting layer, and obtaining resulting structure as supporting layer/graphene/initial matrix, (ii) removing the initial matrix, and obtaining structure of supporting layer/graphene, (iii) making graphene surface of support layer/graphene into direct contact with the target substrate, and obtaining structure of supporting layer/graphene/target substrate, (iv) removing support layer through sublimation, and realizing transfer of graphene from initial substrate to target substrate.