• 专利标题:   Memory alloy based dynamic control circular dichroism device, has first graphene layer covered on opening position of groove, and second graphene layer arranged on side of memory alloy unit that is arranged far away from substrate.
  • 专利号:   CN112764242-A
  • 发明人:   YU M
  • 专利权人:   YU M
  • 国际专利分类:   G02F001/01
  • 专利详细信息:   CN112764242-A 07 May 2021 G02F-001/01 202148 Pages: 10 Chinese
  • 申请详细信息:   CN112764242-A CN10030050 11 Jan 2021
  • 优先权号:   CN10030050

▎ 摘  要

NOVELTY - The device has a substrate (10) whose surface is formed with a groove. The groove is provided with a gate (20). A first graphene layer (50) is covered on an opening position of the groove. A metal structure layer (70) is provided with multiple metal structure units. A memory alloy layer (60) is provided with multiple memory alloy units. Multiple memory alloy units are arranged on a side of the first graphene layer far away from the substrate. Multiple memory alloy units are arranged on a side of the metal structure unit far away from the substrate. A second graphene layer (80) is arranged on a side of the memory alloy units. USE - Dynamic control circular dichroism device. ADVANTAGE - The device changes shape of the first graphene layer and the second graphene layer so as to change carrier density and conductivity in the first graphene layer and the second graphene layer, so that output voltage of a device electrode is changed. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of device for dynamically regulating circular dichroism based on memory alloy. Substrate (10) Gate (20) First graphene layer (50) Memory alloy layer (60) Metal structure layer (70) Second graphene layer (80)