• 专利标题:   System, useful for partially altering defects in a layer on a substrate, comprises a chamber configured to receive a layer including graphene and a container configured to be in communication with the chamber.
  • 专利号:   US2014230733-A1
  • 发明人:   MILLER S A
  • 专利权人:   EMPIRE TECHNOLOGY DEV LLC
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   US2014230733-A1 21 Aug 2014 C01B-031/04 201459 Pages: 12 English
  • 申请详细信息:   US2014230733-A1 US265991 30 Apr 2014
  • 优先权号:   US377971, US265991

▎ 摘  要

NOVELTY - System comprises a chamber configured to receive a layer including one or more defects in graphene and a container configured to be in communication with the chamber. The chamber and the container are configured to expose the layer to a gas including hydrogen and at least one of boron, aluminum, gallium, indium and thallium, where the exposure of the layer to the gas at least partially alters the defects in the graphene. USE - The system is useful for partially altering defects in a layer i.e. graphene layer, on a substrate (claimed) i.e. silicon dioxide substrate, where the defects are chemical oxidation defects such as epoxides, carboxylic acid functionalities, alcohols, and/or ketones. ADVANTAGE - The system effectively alters the defects in the graphene without degrading electrical conductivity and chemical inertness or mechanical properties.