▎ 摘　　要

NOVELTY - The device has an n-type layer formed with a quantum well layer. A p-type layer is formed with an epitaxial layer structure. A p-contact layer is arranged on the p-type layer, a graphene transparent layer and a conductive reflection layer. An ohmic contact layer is covered with a part of a p-type layer surface. The graphene transparent layer is formed by multiple transfers. The graphene transparent layer is formed by a stacking. The ohmic contact is arranged between the p-contact layer, the p-type layer and the transparent layer. The ohmic layer is formed with multiple-layer structure. USE - UV light LED device. ADVANTAGE - The device reduces surface resistance and contact resistivity, and improves luminous efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an UV light LED device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional view of an UV light LED device.