▎ 摘　　要

NOVELTY - Method for growing silicon carbide layer involves forming a silicon carbide film (102) on a layer (104) comprising graphene and/or hexagonal boron nitride, formed on a substrate (108), in presence of a gaseous material comprising an inert gas. USE - Method for growing silicon carbide layer used in electronic/photonic device. ADVANTAGE - The method enables economical formation of silicon carbide layer with rapid release rate and controllable release thickness. The substrate used in the process has excellent reusability. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a system for growing silicon nitride film. Silicon carbide film (102) Layer of graphene and/or hexagonal boron nitride (104) Substrate (106) Gaseous material (108) System (2000)