• 专利标题:   Vacuum chamber tunnel furnace and tubular linear gas supply arrangement for production of graphene single crystal film, in which copper-nickel foil moving device moves copper-nickel foil to react with deposition gas to produce graphene film.
  • 专利号:   CN110656373-A
  • 发明人:   WANG Y
  • 专利权人:   WANG Y
  • 国际专利分类:   C30B025/00, C30B029/02
  • 专利详细信息:   CN110656373-A 07 Jan 2020 C30B-029/02 202009 Pages: 4 Chinese
  • 申请详细信息:   CN110656373-A CN10733536 29 Jun 2018
  • 优先权号:   CN10733536

▎ 摘  要

NOVELTY - The arrangement has a tunnel furnace and a copper-nickel foil moving device are arranged in a vacuum chamber. A point furnace and a tube-type linear gas supply device are set in the tunnel furnace. The copper-nickel foil moving device moves the copper-nickel foil to react with the deposition gas to crack and produce a single crystal graphene film. USE - Vacuum chamber tunnel furnace and tubular linear gas supply arrangement for production of graphene single crystal film. ADVANTAGE - The gas supply of the stabilized tubular linear gas supply device ensures the continuous production of large-area single crystal graphene. The large-area single-crystal graphene films are enabled to be produced in large quantities.