▎ 摘　　要

NOVELTY - Room temperature nickel telluride-graphene heterojunction terahertz detector comprises a substrate (1) is a silicon dioxide layer (2). The silicon dioxide layer is provided with nickel telluride (3) and (graphene) heterojunction. The two ends of the heterojunction is a source electrode (5) and a drain electrode (6). The source electrode and the drain electrode are metal composite electrodes. The lower layer metal is chromium as the adhesion layer. The thickness is 20 nm, the upper layer metal is gold, and the thickness is 50 nm. USE - Room temperature nickel telluride-graphene heterojunction terahertz detector. ADVANTAGE - The detector enhances the interaction of incident electromagnetic wave and material, realizes terahertz spectrum absorption of room temperature and high sensitivity, enhances the source and drain current of the detector, improves the response rate of the device and reduces the equivalent noise power, high response rate, fast response, low noise and convenient integration. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of room temperature nickel telluride-graphene heterojunction terahertz detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of room temperature nickel telluride-graphene heterojunction terahertz detector. 1Substrate selection 2Substrate surface 3Nickel telluride 4Graphene 5Source electrode 6Drain electrode