▎ 摘　　要

NOVELTY - Growing single crystal III-nitrides on ceramic substrate comprises (1) selecting the ceramic substrate, (2) depositing filling material on the surface of the ceramic substrate, and then grinding and polishing to obtain a smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on the surface, (3) forming a nitride layer on the surface, (4) forming a two-dimensional material layer on the surface, and (5) growing single crystal III-nitride on the surface. USE - The method is useful for growing single crystal III-nitrides on ceramic substrate. ADVANTAGE - The smooth surface is achieved by depositing filler material on a ceramic substrate and grinding and polishing, forms an aluminum-oxygen compound layer or two-dimensional material layer on the surface to optimize the c-axis orientation of the nitride in the next step, the subsequent nitride layer provides a polarization field for the growth of single crystal III-nitride, ensures its growth orientation, promotes the nucleation of the growth process, the two-dimensional material layer provides an ordered hexagonal structure for the growth of the III-nitride layer, ensures the growth of the III-nitride with a single crystal hexagonal structure, realizes the epitaxial growth of single crystal group III nitride on the ceramic substrate, improves the crystal quality and heat dissipation performance, and greatly reduces the cost.