▎ 摘　　要

NOVELTY - The semiconductor memory device comprises a first device layer (100) storing thermal energy, and a second device layer (200) including a material whose electrical properties are changed by the thermal energy. The first device layer stores the thermal energy if a voltage is applied to the second device layer. The first device layer is made of a material selected from a group consisting of high molecular polymer-based or metal oxide-based including polyimide, polyethylene terephthalate, polyether-sulfone, polyethylene naphthalate, polycarbonate, silicon, silicon dioxide, glass, or aluminum oxide. The second layer (220) is made of a resistance change material comprising one or more selected from a group consisting of metal oxide-based, high molecular polymer-based, or low molecular compound-based material including vanadium oxide, niobium oxide, tantalum oxide, germanium antimony telluride or zinc telluride. USE - Semiconductor memory device such as dynamic random access memory (DRAM), NAND Flash (RTM: Computer multimedia application) memory, and phase-change RAM (PRAM). ADVANTAGE - The semiconductor memory device has a fast-switching mechanism but does not cause leakage current thus not showing resistance drift due to repetitive switching. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor memory device. 100First device layer 200Second device layer 210First layer 220Second layer 230Third layer