▎ 摘　　要

NOVELTY - Preparing low-temperature high-efficiency coordination assembling and synthesizing graphene, comprises e.g. adding metal substrate into plasma-enhanced chemical vapor deposition device, vacuumizing, passing hydrogen gas, heating and annealing, introducing argon and methane gas, using the deposition system with radio frequency of 13.56 MHz, closing the radio frequency power supply and heating power supply after the end of deposition, stopping introduction of e.g. methane gas, cooling, uniformly growing graphene on the surface of the substrate metal. USE - The method is useful for preparing low-temperature high-efficiency coordination assembling and synthesizing graphene (claimed). ADVANTAGE - The method solves the problem of long time consumption and high cost while using the traditional chemical vapor deposition method; can complete the growth of the graphene in a short time; has simple preparation process, and high efficiency; is economical; and is suitable for industrialized production. The prepared graphene has large size, and high quality surface. DETAILED DESCRIPTION - Preparing low-temperature high-efficiency coordination assembling and synthesizing graphene, comprises (i) adding the metal substrate into the plasma-enhanced chemical vapor deposition device, vacuumizing at 5 Pa, passing hydrogen gas, where the flow rate of hydrogen gas is 20 standard cubic centimeters per minute (sccm), the working pressure is 200 Pa, and then heating for 40 minutes, making operating temperature reach 500-700 degrees C, preserving temperature and annealing for 30 minutes, and (ii) continuously introducing argon gas and methane gas, adjusting the flow rate of hydrogen gas, argon gas and methane gas to be 40 sccm, 80 sccm and 8 sccm, respectively, where the operating pressure is 1000 Pa, using the deposition system with radio frequency of 13.56 MHz, where the radio frequency power is 200 W, and the deposition time is 10-300 seconds, and after the end of deposition, closing the radio frequency power supply and a heating power supply, stopping introduction of methane gas, argon gas and hydrogen gas as protective gas, quickly cooling to room temperature, where the cooling speed is 10 degrees C/second, uniformly growing the graphene on the surface of the substrate metal, and completing the preparation of large-size high-temperature graphite, where in the step (i), the metal substrate is a foil or film of cobalt, nickel, copper or molybdenum surface, and the purity is 99-99.99%, and the thickness is 100 nm to 125 mu m.