▎ 摘　　要

NOVELTY - Structure comprises piezoelectric nano-generators for external force induction and a synapse device is used for processing at least two voltage input signals. The synapse device is an electric double layer transistor. The electric double layer transistor uses an electrolyte material as a gate dielectric, an oxide semiconductor as a channel layer and has at least two planar side gates and the piezoelectric nano generator is electrically connected to a side gate of the synapse device. USE - Used as artificial sensory neuron structure based on multi-side gate synapse device. ADVANTAGE - The structure realizes the induction and processing of multiple external signals and breaks through the limitation that one synapse device of the traditional artificial sensory neuron structure processes a sensor signal. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing an artificial sensory neuron structure based on a multi-side gate synapse device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the artificial sensory neuron structure based on multi-side gate synapse device (Drawing includes non-English language text).