▎ 摘　　要

NOVELTY - The utility model claims a semiconductor-based gain and graphene SPP device, wherein it comprises orderly overlapped bottom layer graphene, semiconductor gain layer, the buffer layer and the top layer graphene, the semiconductor gain layer is two sides of T type waveguide structure, T type waveguide structure is symmetrical, structure and same size of the first rectangle and the second rectangle. This device can provide stronger localized constraints, is surface plasma exciting circuit provides light source, and can be compatible with plurality of nano photonic and electronic devices, is the development of low threshold nanometer lasers and other high-density photonic integrated device providing one new prototype device, micro-cavity can provide high performance for surface plasmon field and integrated device.