• 专利标题:   Fixing graphene using a laser beam for manufacturing an electronic device, comprises fixing a defect in a graphene nanoribbon by irradiating the laser beam onto the graphene nanoribbon, and determining the defect of the nanoribbon.
  • 专利号:   US2011092054-A1, KR2011042952-A
  • 发明人:   SEO S, KIM D, WOO Y, CHUNG H, HEO J, SEO S A, KIM D C, WOO Y S, CHUNG H J, HEO J S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/26, H01L021/268, H01L029/786
  • 专利详细信息:   US2011092054-A1 21 Apr 2011 H01L-021/26 201128 Pages: 10 English
  • 申请详细信息:   US2011092054-A1 US805982 27 Aug 2010
  • 优先权号:   KR099833

▎ 摘  要

NOVELTY - The method comprises fixing a defect in a graphene nanoribbon using a laser power of 3.5 mW by irradiating (502) a laser beam onto the graphene nanoribbon for 10-15 minutes using an argon laser that oscillates the laser beam having a wavelength of 514 nm, and determining (501) the defect of the graphene nanoribbon. The determination of the defect includes measuring a Raman spectrum of the graphene nanoribbon and determining a peak of 1350 cm-1 in the graphene nanoribbon. USE - The method is useful for fixing graphene using a laser beam for manufacturing an electronic device (claimed) such as FET. ADVANTAGE - The method is capable of easily and rapidly fixing the graphene with high stability and mobility and less power consumption and without any damage, removes carbon or the coupling of impurities from the graphene, and reduces the loss of channel function of the graphene nanoribbon. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing an electronic device. DESCRIPTION OF DRAWING(S) - The diagram shows a flowchart of a method of fixing a graphene nanoribbon. Determining the defect of the graphene nanoribbon (501) Irradiating laser beam onto the graphene nanoribbon. (502)