• 专利标题:   Graphene powder continuous discharge preparation method involves passing inert gas into microwave plasma chemical vapor deposition system, generating plasma, passing carbon source, and performing graphene powder vapor phase growth.
  • 专利号:   CN110451496-A
  • 发明人:   ZHANG J, SUN Y, LIU H, GAO Z, XU S
  • 专利权人:   BEIJING GRAPHENE INST, UNIV PEKING
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN110451496-A 15 Nov 2019 C01B-032/186 201996 Pages: 18 Chinese
  • 申请详细信息:   CN110451496-A CN10875607 17 Sep 2019
  • 优先权号:   CN10875607

▎ 摘  要

NOVELTY - A graphene powder continuous discharge preparation method comprises passing inert gas into microwave plasma chemical vapor deposition system, generating plasma, passing carbon source, performing graphene powder vapor phase growth, stopping inletting carbon source, introducing etching agent, etching, and repeating steps. USE - The graphene powder continuous discharge preparation method. ADVANTAGE - The product has quality and purity, has low oxygen content, and has average size of 300 nm. The method is suitable for continuous and batch preparation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for microwave plasma chemical vapor deposition system.