▎ 摘　　要

NOVELTY - Growing large-size graphene crystal domains comprises putting high-purity copper foil in Faraday cage, placing Faraday cage in the plasma-enhanced chemical vapor deposition (PECVD) reaction chamber, closing the reaction chamber in vacuum of 300 Pascal (Pa), and heating the chamber to 850-900℃. The reaction argon gas flow rate is adjusted to 20-50mL/min. The hydrogen gas flow rate is adjusted to 4-10 ml/min. The dilute methane gas flow rate is 1-2mL/min. The chamber vacuum is maintained below 25Pa to generate plasma and grow graphene for 180-900 seconds. The vacuum degree of the cavity is kept below 300 Pa and cooled to room temperature under argon gas atmosphere after stopping the heating and turning off the methane, hydrogen, and plasma. USE - Method for growing large-size graphene crystal domains at low temperature by PECVD method. ADVANTAGE - The method enables to grow large size graphene crystal domain at low temperature, which can effectively enlarge the graphene crystal domains size, compared with the graphene film grown under the same condition.